GeneSiC Semiconductor, Inc. is a SiC power semiconductor company that has developed a proprietary Silicon Carbide (SiC) power device technology based on proprietary materials processing, device architecture, and device fabrication technology. The Company’s proprietary technology is the foundation for several families of SiC high voltage diodes, transistors, rectifiers.
GeneSiC’s mission is to become the market leader in high quality, high value added Silicon Carbide based semiconductor devices. The company strives to offer industry-leading device technology, and pursue high volume opportunities. GeneSiC’s team has unique expertise in the complex and unique technology of Silicon Carbide power devices. Devices are designed using 2-dimensional finite element analysis. After fundamental physics-based simulation parameters are determined, these parameters are translated into layout designs using sub-micron mask layout designs. These layouts are carefully matched with the fabrication techniques and optimization. GeneSiC has unique and world-leading expertise in the specialized nature of fabrication techniques used towards fabrication on Silicon Carbide wafer fabrication. Wafers thus fabricated are tested up to extremely high voltages using specialized testing equipment. Wafers are diced into individual devices and packaged into pro
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